2010 · 24 citations · 3 references
Natural SciencesMaterials EngineeringMaterials ScienceMagnetic MaterialsMemorySemiconductor DevicesAntiferromagnetic MaterialsAntiferromagnetismMagnetic Recording MaterialsMagnetic Thin FilmsMemory DevicesSpintronicsAntiferromagnetic CouplingAntiferromagnetic HeterostructuresMagnetic Tunnel JunctionsMagnetoresistive Random-access MemoryRandom Access Memory (Ram)Spin-transfer Torque MemoryTunnel Junctions
We report on spin transfer torque magnetoresistance random access memory (STT-MRAM) with magnetic tunnel junctions (MTJs) that have a top-pinned stacking structure. By adopting the top-pinned structure, in which a pinned layer and an antiferromagnetic layer are deposited above the MgO tunnel barrier, we can relieve the current limitation caused by driving power asymmetry of the transistor in a 1T/1M structure without an additional current path to make a reverse connection between the transistor and the top side of the MTJs, resulting in the cell area being reduced by about half.
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