Effect of intense proton irradiation on properties of Josephson devices

Abstract

We have experimentally investigated the effects of intense proton beam irradiation (up to 10/sup 15/ p/cm/sup 2/) on Josephson junctions and junction arrays. The devices we have studied were realized using state of the art full-Nb technology, employing same materials and thicknesses of common Josephson digital circuit designs. We have analysed in detail the magnetic field dependence of the junction critical current, and the quasiparticle tunneling current, in order to observe possible occurrence of permanent changes produced by the ionizing particles. No evidence of radiation induced damage on the properties of the junctions has been found.