2002 · 34 citations · 3 references
EngineeringElectrical EngineeringMaterials ScienceMicroelectronicsSemiconductor DevicesSemiconductor MaterialsComplementary Metal-oxide-semiconductor TechnologyDevice CharacterizationDevice ScalingDopingMetal-oxide-semiconductor Field-effect TransistorsOxide SemiconductorsEquivalent Oxide ThicknessGate Oxide InterfacesGate Oxide ScalingGate Oxide Thickness EffectsGate OxidesPolysiliconSilicon-on-insulator CmosVoltage Drop Analysis
Accurate characterization of thin oxide conduction current, breakdown, and MOSFET current require an accounting for the voltage drop due to the depletion of the polysilicon gate. The reduction of oxide thickness and polysilicon doping ascerbate this effect. Scaled n+/p+ dual gate CMOS technology incorporates both these trends, due to process integration constraints which limit the concentration of active dopants in polysilicon. The authors investigate effects of polysilicon depletion on the thin oxide MOS system.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
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Subbreakdown drain leakage current in MOSFET
J. Chen, T.Y. Chan, I.C. Chen et al. · IEEE Electron Device Letters · 1987 · 301 citations