Separation of irradiation induced gate oxide chargeand interface traps effects in power VDMOSFETs

Abstract

Irradiation induced degradation mechanisms in power VDMOSFETs are analysed using the subthreshold-midgap and single-transistor mobility methods. It is shown that the irradiation induced degradation of power VDMOSFETs is due to a significant increase of the gate oxide charge and somewhat smaller increase of the interface traps.