IEEE Journal on Selected Areas in Communications · 1986 · 14 citations · 3 references
EngineeringComputer EngineeringElectrical EngineeringMicroelectronicsSemiconductor DevicesVlsi DesignCmos Circuit DesignHigh-frequency Semiconductor DevicesIntegrated Circuit DesignLow-power Digital Circuit DesignSwitching TechniquesHigh-speed Circuit DesignPower ConsumptionShift RegistersSwitching DevicesTime Division Switching
A high-speed time switch using GaAs LSI technology is discussed. A new high-speed time switch structure consisting primarily of shift registers is proposed. This structure requires relatively minimal hardware in designing LSI. As the first stage of study, a GaAs 4-channel time switch LSI is manufactured using this structure. Switching speed of the LSI is 2 Gbits/s and the power consumption 0.64 W/chip. Largecapacity switch configurations using this time switch are proposed. This high-speed time switch makes possible the time-division switching of such services as T.V. and high-definition T.V.
3
A GaAs 16 × 16b parallel multiplier using self alignment technology
Y. Nakayama, K. Suyama, Haruo Shimizu et al. · 1983 · 23 citations
Engineering, Computer Engineering, Electrical Engineering +10