Hybrid Permeable‐Base Transistors Based on an Indenofluorene Derivative

Abstract

Hybrid transistor highs! Hybrid permeable-base transistors are demonstrated (schematic circuit in Figure), which are based on an indenofluorene derivative (structure shown) and which operate by positive-charge-carrier transport. When the base/collector junction is reverse biased, the base transport factor of these devices saturates at nearly 100 %. They can be operated at current densities of the order of 1 mA mm−2.