2004 · 18 citations · 8 references
EngineeringElectrical EngineeringCircuit TheoryElectronic MaterialsSemiconductor DevicesDevice CharacterizationIii-v SemiconductorsSemiconductor ReliabilityWide Band Gap SemiconductorsWide-bandgap Semiconductor DevicesWide-bandgap SemiconductorsBreakdown MechanismsBreakdown VoltageGallium Nitride (Gan) MaterialsGallium Nitride Power DevicesHigh-voltage BreakdownJunction BreakdownSchottky Barrier CharacteristicsSchottky Barrier Diodes
A vertical GaN Schottky barrier diode (SBD) employing a floating metal ring as an edge termination is described. The breakdown voltage is larger than a device without any termination that has been fabricated on a bulk GaN substrate. Fabricated GaN SBD exhibits a high breakdown voltage of 353 V and very fast reverse recovery characteristics of 28 ns. The breakdown voltage of a device without termination is 159 V. It should be noted that the proposed device does not require any additional processes.
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GaN: Processing, defects, and devices
S. J. Pearton, J.C. Zolper, R. J. Shul et al. · Journal of Applied Physics · 1999 · 1.8K citations
Fabrication and performance of GaN electronic devices
S. J. Pearton, F. Ren, A.P. Zhang et al. · Materials Science and Engineering R Reports · 2000 · 498 citations
High voltage (450 V) GaN Schottky rectifiers
Zvonimir Bandić, P. M. Bridger, E. C. Piquette et al. · Applied Physics Letters · 1999 · 153 citations