Publication | Open Access
Iron-assisted ion beam patterning of Si(001) in the crystalline regime
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Citations
26
References
2012
Year
Materials SciencePattern FormationIon ImplantationEngineeringCrystalline DefectsMicrofabricationSurface ScienceApplied PhysicsObserved Pattern FormationSiliceneIon Beam InstrumentationIon BeamPhase SeparationIon EmissionSilicon On InsulatorMedicineCrystalline RegimeMicrostructure
We present ion beam erosion experiments on Si(001) with simultaneous sputter co-deposition of steel at 660 K. At this temperature, the sample remains within the crystalline regime during ion exposure and pattern formation takes place by phase separation of Si and iron-silicide. After an ion fluence of F ≈ 5.9 × 1021 ions m−2, investigations by atomic force microscopy and scanning electron microscopy identify sponge, segmented wall and pillar patterns with high aspect ratios and heights of up to 200 nm. Grazing incidence x-ray diffraction and transmission electron microscopy reveal the structures to be composed of polycrystalline iron-silicide. The observed pattern formation is compared to that in the range of 140–440 K under otherwise identical conditions, where a thin amorphous layer forms due to ion bombardment.
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