Publication | Closed Access
H<sub>3</sub>PO<sub>4</sub> — etching of {001}‐faces of InP, (GaIn)P, GaP, and Ga(AsP)
26
Citations
7
References
1979
Year
Materials EngineeringMaterials SciencePo 4Hot H 3EngineeringPhysicsCrystalline DefectsDislocation InteractionDislocation Etch PitsSurface ScienceApplied PhysicsSurface AnalysisDefect FormationHydrogenPlasma EtchingMicrostructure
Abstract This paper shows that hot H 3 PO 4 is a suitable etchant for the production of dislocation etch pits on {001}‐InP, (InGa)P, GaP, Ga(AsP), and {111}‐GaP. The effects upon etch pit morphology of the misorientation of samples and the type of dislocations are investigated in detail.
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