Porous silicon Bragg reflectors with sub-micrometer lateral dimensions

Abstract

Bragg reflectors with widths down to 300 nm have been fabricated in porous silicon. This was achieved by irradiation of highly-doped p-type silicon with a focused beam of high-energy ions in a channeled alignment, in which the beam is aligned with a major crystallographic direction. The reflected colour is controllably tuned across the visible spectrum by varying the ion irradiated dose. The depth distribution of ion induced defects differs in channeled alignment compared to random beam alignment, resulting in the hole current during subsequent anodisation being more confined to narrower lateral regions, enabling different reflective wavelengths to be patterned on a sub-micron lateral scale. This work provides a means of producing high-density arrays of micron-size reflective colour pixels for uses in high-definition displays, and selectively tuning the wavelengths of porous silicon Fabry-Perot microcavities across the visible and infra-red ranges for optical communications and computing applications.