Effect of Impurity and Carrier Concentrations on Electrical Resistivity and Thermal Conductivity of Sic Ceramics Containing BeO

Abstract

Silicon carbide ceramics with BeO as an additive exhibit unusually high electrical resistivity and thermal conductivity compared to conventional SiC ceramics. Studies concerning the effects of carrier concentration in the SiC grains on electrical properties and thermal conductivity are described. The low carrier concentration in this ceramic is responsible for the high electrical resistivity. The thermal conductivity, however, decreases gradually with increasing impurity concentration.