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Exploring Spatial Resolution in Electron Back-Scattered Diffraction Experiments via Monte Carlo Simulation
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1998
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Monte Carlo ModelEngineeringMicroscopyElectron DiffractionElectron TrajectoriesElectron OpticElectron PhysicElectron MicroscopyComputational ElectromagneticsSpatial ResolutionPhysicsMonte-carlo ModellingDiffractionAtomic PhysicsMonte Carlo SimulationSynchrotron RadiationApplied PhysicsCondensed Matter PhysicsElectron Microscope
A Monte Carlo model was used to simulate specimen-electron beam interactions relevant to electron back-scattered diffraction (EBSD). Electron trajectories were calculated for a variety of likely experimental conditions to examine the interaction volume of the incident electrons as well as that of the subset of incident electrons that emerge from the specimen, i.e., back-scattered electrons (BSEs). The spatial resolution of EBSD was investigated as functions of both materials properties, such as atomic number, atomic weight, and density, and experimental parameters, such as specimen thickness, tilt, and incident beam accelerating voltage. These simulations reveal that the achievable spatial resolution in EBSD is determined by these intrinsic and extrinsic parameters.