Power Semiconductor Device Figure of Merit for High-Power-Density Converter Design Applications

Abstract

In order to help device selection and optimal application in high-power-density converter designs, a new power semiconductor device figure of merit (FOM)-power density FOM-is proposed, with consideration of power device conduction and switching losses, thermal characteristics, and package. The FOM is derived based on the device theory, and its validity and usefulness are demonstrated with a practical design example.