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A 1-157 GHz InP HEMT traveling-wave amplifier

DOI

18

Citations

11

References

2002

Year

B. Agarwal, A. Schmitz, J.J. Brown, M. Lui, M.J.W. Rodwell

Unknown Venue

Abstract

We report traveling wave amplifiers with 1-157 GHz 3-dB bandwidth, 5 dB gain. These amplifiers were fabricated in a 0.1 /spl mu/m gate length InGaAs/InAlAs HEMT MMIC technology. The use of gate-line capacitive-division and low-loss elevated coplanar waveguide lines have yielded record bandwidth broadband amplifiers.

References

YearCitations

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