Two‐ and Three‐Terminal Resistive Switches: Nanometer‐Scale Memristors and Memistors

Abstract

Abstract The logical relationship between two previously defined “memory resistors” is revealed by constructing and experimentally demonstrating a three‐terminal memistor equivalent circuit using two two‐terminal memristors. A technique is then presented, using nanoimprint lithography in combination with angle evaporation, to fabricate a single nanoscale device with a footprint of 4F 2 , where F is the minimum lithographic feature size, that can be operated as either a two‐terminal lateral memristor or a three‐terminal memistor inside a crossbar structure. These devices exhibit repeatable bipolar nonvolatile switching behavior with up to 10 3 ON/OFF conductance ratios, as well as the desired three‐terminal behavior.