IEEE Photonics Technology Letters · 1996 · 45 citations · 7 references
Optical MaterialsEngineeringOptoelectronic DevicesIntegrated CircuitsSilicon On InsulatorSemiconductorsPhotodetectorsOptical PropertiesGaas PredepositionMolecular Beam EpitaxyCompound SemiconductorSemiconductor TechnologyPhotonicsElectrical EngineeringSi SubstratesOptoelectronic MaterialsPhotoelectric MeasurementSemiconductor Device FabricationOptoelectronicsApplied PhysicsInsb Detector Arrays
The InSb infrared photodetectors grown heteroepitaxially on Si substrates by molecular beam epitaxy (MBE) are reported. Excellent InSb material quality is obtained on 3-in Si substrates (with a GaAs predeposition) as confirmed by structural, optical, and electrical analysis. InSb infrared photodetectors on Si substrates that can operate from 77 K to room temperature have been demonstrated. The peak voltage-responsitivity at 4 μm is about 1.0×10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sup> V/W and the corresponding Johnson-noise-limited detectivity is calculated to be 2.8×10/sup 10/ cm/spl middot/Hz <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">1</sup> 2//W. This is the first important stage in developing InSb detector arrays or monolithic focal plane arrays (FPAs) on silicon. The development of this technology could provide a challenge to traditional hybrid FPA's in the future.
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Jesse G. Wales · Physics Bulletin · 1971 · 647 citations
Engineering, Semiconductor Physics, Semiconductor Materials +16
Molecular beam epitaxial growth of high quality InSb
E. Michel, Gurmit Jagjit Singh, S. Slivken et al. · Applied Physics Letters · 1994 · 53 citations · Full text
Materials Engineering, Semiconductors, Materials Science +10