Complementary Antiparallel Schottky Barrier Diode Pair in a 0.13- $\mu \hbox{m}$ Logic CMOS Technology

Abstract

A shunt-connected complementary antiparallel diode pair (C-APDP) using n- and p-type Schottky barrier diodes (SBDs) in a 0.13-mum CMOS logic process is demonstrated. The structure eliminates the deleterious effects of parasitic capacitance to substrate and reduces the substrate resistance effects. The extrapolated cutoff frequency of C-APDP is above 470 GHz, which demonstrates the potential as a millimeter-wave frequency component. The harmonic power measurements indicate that C-APDPs can generate more than 25 dB higher third harmonic powers than n-type SBDs. The C-APDPs can be integrated with the other devices in CMOS technologies to enable generation and processing of millimeter- and submillimeter-wave signals.