Latent noise in Schottky barrier MOSFETs

Abstract

This study elucidates the latent noise mechanisms in Schottky barrier MOSFETs (SBMOS; MOSFET: metal–oxide–semiconductor field effect transistor). The complex noise problems in SBMOS arise from the particular ambipolar current conduction and the additional interface states at metallic source/drain junctions. In addition to the excess noise of conventional MOSFETs, which is associated with gate oxide traps and variations in channel mobility, the interface traps at the metallic source/drain are key to the overall noise characteristics of SBMOS. Most possible noise sources under various operating conditions are summarized herein to provide a comprehensive understanding of how noise potentially limits the practical applications of SBMOS devices.