Non‐Aqueous Routes to Metal Oxide Thin Films by Atomic Layer Deposition

Abstract

Controlled growth: A non-aqueous approach inspired from sol–gel chemistry and adapted to the formation of metal oxide thin films by means of atomic layer deposition is presented. The process is based on the reaction of a carboxylic acid with an alkoxide. Growth of metal oxides is achieved at temperatures as low as 50 °C on various supports including carbon nanotubes (see TEM picture). The as-grown films show excellent uniformity and possess good dielectric properties. Supporting information for this article is available on the WWW under http://www.wiley-vch.de/contents/jc_2002/2008/z705550_s.pdf or from the author. Please note: The publisher is not responsible for the content or functionality of any supporting information supplied by the authors. Any queries (other than missing content) should be directed to the corresponding author for the article.