80-Gb/s Low-Driving-Voltage InP DQPSK Modulator With an n-p-i-n Structure

Abstract

We present a traveling-wave-electrode InP-based differential quadrature phase-shift keying modulator with a novel n-p-i-n waveguide structure. The structure features low electrical and optical propagation losses, which allow the modulator to operate at a high bit rate together with a low driving voltage and a low insertion loss. We successfully demonstrate 80-Gb/s modulation with a driving voltage of only 3 V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">pp</sub> in a push-pull configuration. The chip size is just 7.5 mm times 1.3 mm.