IEEE Electron Device Letters · 2001 · 26 citations · 6 references
EngineeringComputer EngineeringElectrical EngineeringCircuit TheoryMicroelectronicsSemiconductor DevicesCmos Circuit DesignDevice ModelingDevice SimulationIntegrated Circuit DesignMos CapacitorsOxide SemiconductorsCapacitance ModelingCapacitorsCompact Device ModelingCompact ModelingMetal-oxide-semiconductor Field-effect Transistor ModelingNumerical Device SimulationSurface PotentialSurface Potential Analysis
This paper presents a compact model for metal oxide semiconductor (MOS) capacitors, based on a time-dependent solution for the surface potential. This enables modeling of the frequency dependence of MOS capacitors, which is not possible with existing compact models. The model is implemented in Verilog-A, and is verified against two-dimensional (2-D) numerical device simulations with DESSIS.
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