A time-dependent, surface potential based compact model for MOS capacitors

Abstract

This paper presents a compact model for metal oxide semiconductor (MOS) capacitors, based on a time-dependent solution for the surface potential. This enables modeling of the frequency dependence of MOS capacitors, which is not possible with existing compact models. The model is implemented in Verilog-A, and is verified against two-dimensional (2-D) numerical device simulations with DESSIS.