IEEE Journal of Quantum Electronics · 1975 · 22 citations · 17 references
EngineeringElectrical EngineeringMaterials ScienceOptoelectronicsPhotonicsSemiconductor DevicesHeat Transfer ModelingLaser DiodesLaser PhysicsSemiconductor LasersThermal Properties Of MaterialsThermal Properties Of SemiconductorsContinuous-wave LasersDouble Heterostructure DevicesHeat Sink Thermal ModelingHeterostructure LasersPower OutputPower Output AnalysisPower Output ModelingThermal Management In Semiconductor Lasers
Procedures for calculating the range of currents and heat-sink temperatures in which continuous-wave (CW) operation is possible and the light-output power levels within this range are presented for double-heterostructure (DH) lasers with an oxide-insulated stripe geometry. A one-dimensional heat-flow model has been assumed within the device followed by two-dimensional heat flow into the heat sink. It is shown that a laser with stripe dimensions (13 μm <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">\times 400\mu</tex> m) and typical thicknesses can achieve CW operation at heat-sink temperatures up to about 431 K. At 300 K, the theoretical power output is in the 40-50-mW range for <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">J = 2J_{th}</tex> . The effects of varying thicknesses and the aluminum content in the GaAlAs confining layer are considered. The limitations of the calculation are discussed as well as its applicability to other stripe-geometry devices.
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Thermal resistance of heterostructure lasers
W. B. Joyce, R. W. Dixon · Journal of Applied Physics · 1975 · 278 citations