A fully integrated SiGe receiver IC for 10-Gb/s data rate

Yuriy Greshishchev, Peter Schvan, J.L. Showell, Muliang Xu, Jugnu J. Ojha, J.E. Rogers

IEEE Journal of Solid-State Circuits · 2000 · 78 citations · 11 references

Concepts

Abstract

A silicon germanium (SiGe) receiver IC is presented here which integrates most of the 10-Gb/s SONET receiver functions. The receiver combines an automatic gain control and clock and data recovery circuit (CDR) with a binary-type phase-locked loop, 1:8 demultiplexer, and a 2/sup 7/-1 pseudorandom bit sequence generator for self-testing. This work demonstrates a higher level of integration compared to other silicon designs as well as a CDR with SONET-compliant jitter characteristics. The receiver has a die size of 4.5/spl times/4.5 mm2 and consumes 4.5 W from -5 V.

References

11