IEEE Photonics Technology Letters · 1995 · 19 citations · 9 references
EngineeringElectrical EngineeringPhysicsElectronic MaterialsOptoelectronicsPhotonicsLaser DiodesLaser PhysicsQuantum Well DevicesQuantum WellsSemiconductor LasersStrain EngineeringCharge Carrier DensityDevice OptimizationDifferential GainGainLasersOptical GainQuantum Well LasersStrained Quantum Wells
We describe the important characteristics of high-speed p-doped compressively strained MQW lasers obtained from comprehensive below-threshold DC measurements. Results of gain and differential gain versus wavelength and carrier density are verified by above-threshold resonance measurements. Measurement-derived design curves of gain, differential gain, and linewidth enhancement factor allow device optimization for high speed and low chirp.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
9