Physical Review Letters · 1996 · 145 citations · 15 references
Natural SciencesMaterials SciencePhysicsCondensed Matter PhysicsNanotechnologySemiconductor MaterialsNanomechanicsNanostructured Electronic MaterialsSemiconductor NanomaterialsSilicon MaterialsX-ray CrystallographyX-ray DiffractionLattice MisfitLattice StrainSemiconductor NanostructuresStrain EffectsStrain In NanostructuresSynchrotron X-ray DiffractionX-ray Diffraction AnalysisX-ray Diffraction Strain Analysis
Scanning tunneling microscopy and synchrotron x-ray diffraction have been used to investigate nanoscale Ge hut clusters on $\mathrm{Si}(001)$. We have been able to identify the contributions to the scattered x-ray intensity which arise solely from the hut clusters and have shown that x-ray diffraction can be very sensitive to the strain field in the hut clusters. At the Ge/Si interface the Ge clusters are almost fully strained with a misfit of only 0.5% but towards the apex of the clusters the strain is relaxed and the atomic spacing is close to the natural Ge lattice spacing with a 4.2% misfit.
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Kinetic pathway in Stranski-Krastanov growth of Ge on Si(001)
Y. W. Mo, D. E. Savage, B. S. Swartzentruber et al. · Physical Review Letters · 1990 · 1.4K citations
Natural Sciences, Materials Engineering, Materials Science +17
Spontaneous Ordering of Arrays of Coherent Strained Islands
V. A. Shchukin, N. N. Ledentsov, P. S. Kop’ev et al. · Physical Review Letters · 1995 · 567 citations