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Multi-layered Vertical Gate NAND Flash overcoming stacking limit for terabit density storage
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2006
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Hardware SecurityNon-volatile MemoryElectrical EngineeringEngineeringTerabit Density StorageNanotechnologyNanoelectronicsVertical BlocksApplied PhysicsFlash MemoryComputer ArchitectureComputer EngineeringSemiconductor MemoryVertical Gate NandFlash ArrayMicroelectronics
Vertical Gate NAND (VG-NAND) Flash array with multi-active layers has been successfully integrated for the first time. VG-NAND confirmed stable operations of program, body erase, and read. There is no aggravation on program disturbance with increased number of layers due to an architecture of VG-NAND with vertical blocks.