Method for characterization of intrinsic and extrinsic components of semiconductor laser diode circuit model

Abstract

A simple method for the characterization of the intrinsic and extrinsic parameters of a semiconductor laser diode has been described. This method is based on the measurement of intensity noise, small-signal modulation response and input reflection coefficient of the device. The intrinsic 3-dB-modulation bandwidth and the extrinsic parasitic components associated with the device can be readily determined by using the analytical expressions presented. It has been shown that the major limitation of the 3-dB-modulation bandwidth can be attributed to the device chip RC time constant.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">&gt;</ETX>