Straight and Smooth GaN Nanowires

Abstract

Long, straight gallium nitride nanowires, such as those shown in the Figure, are reported to have been grown directly on substrates, without templates, from the reaction of ammonium with metal gallium. Nanoparticle catalysts and directed flow of the carrier gas are shown to be the main factors leading to the quasi-1D growth. GaN nanowires can be used to improve the performance of certain optoelectronic devices.