Effect of oxygen migration and interface engineering on resistance switching behavior of reactive metal/polycrystalline Pr<inf>0.7</inf>Ca<inf>0.3</inf>MnO<inf>3</inf> device for nonvolatile memory applications

Abstract

An in-depth study on the resistive switching mechanism of perovskite oxide based device was performed. Compared with filament type resistive switching device, excellent switching uniformity was obtained due to controlled redox reaction at metal/oxide interface. Electromigration of oxygen ion under the bipolar electric filed can explain the switching behavior. Formation of ultrathin AlO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</sub> at the interface can guarantee excellent retention characteristics at 125°C. Compared with the large area (50 × 50 um <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> ) memory cell, the nanoscale device (¿=50 nm) showed better memory performance such as faster switching speed, better uniformity, endurance, and retention characteristics.