IEEE Transactions on Magnetics · 2005 · 34 citations · 10 references
Natural SciencesMaterials EngineeringMaterials ScienceElectronic MaterialsMagnetic MaterialsMetallic MaterialsFerromagnetic MaterialsMagnetic OxidesMagnetism In SolidsMagnetization ProcessesSpintronic MaterialsSpintronicsCurrent DensityCurrent-induced Magnetization SwitchingMagnetic Tunnel JunctionsTunnel JunctionsTunneling Current
Current-induced magnetization switching (CIMS) was demonstrated in low resistance magnetic tunnel junctions (MTJs) with thin MgO [001] barrier. The resistance change by CIMS was more than 100%, which is much larger than the previous report in Al-O based MTJs. The switching current density was about 2/spl times/10/sup 7/ A/cm/sup 2/, which was comparable with that reported values in metallic multilayers.
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Giant tunnelling magnetoresistance at room temperature with MgO (100) tunnel barriers
S. Parkin, Christian Kaiser, Alex Panchula et al. · Nature Materials · 2004 · 3.3K citations