Light‐Induced Bipolar‐Resistance Effect Based on Metal–Oxide–Semiconductor Structures of Ti/SiO₂/Si

Abstract

A novel approach to the control of resistance in a Ti/SiO2/Si structure is demonstrated by use of a laser via a phenomenon referred to as the bipolar-resistance effect (BRE). The most significant features of this BRE are an excellent spatial sensitivity and a large change ratio in resistance as the laser moves along the surface of the structure.