Modified droplet epitaxy GaAs/AlGaAs quantum dots grown on a variable thickness wetting layer

Growth by molecular beam epitaxy and characterization of InAs/GaAs strained-layer superlattices

Leon J. Goldstein, Frank Glas, J. Y. Marzin et al. · Applied Physics Letters · 1985 · 893 citations

Natural Sciences, Materials Engineering, Materials Science +17

Direct formation of vertically coupled quantum dots in Stranski-Krastanow growth

N. N. Ledentsov, V. A. Shchukin, Marius Grundmann et al. · Physical review. B, Condensed matter · 1996 · 518 citations

Engineering, Materials Engineering, Materials Science +17

Efficient Carrier Relaxation Mechanism in InGaAs/GaAs Self-Assembled Quantum Dots Based on the Existence of Continuum States

Yasunori Toda, Osamu Moriwaki, M. Nishioka et al. · Physical Review Letters · 1999 · 360 citations

Natural Sciences, Electrical Engineering, Materials Science +17

New MBE growth method for InSb quantum well boxes

Nobuyuki Koguchi, Satoshi Takahashi, Toyohiro Chikyow · Journal of Crystal Growth · 1991 · 351 citations

Natural Sciences, Computer Science, Materials Science +13

Carrier thermal escape and retrapping in self-assembled quantum dots

S. Sanguinetti, M. Henini, M. Grassi Alessi et al. · Physical review. B, Condensed matter · 1999 · 334 citations

Engineering, Electrical Engineering, Materials Science +17