Concepedia

Tunable Photodetector Based on GaAs/InP Wafer Bonding

Xiaomin Ren, Hui Huang, Xiangyu Wang, Haiyun Cui, Aiyu Miao, Yiqi Li, Yongqing Huang

IEEE Electron Device Letters · 2006 · 11 citations · 7 references

Abstract

We demonstrate a tunable long wavelength vertical-cavity photodetector which is fabricated by bonding a GaAs-based tunable filter with an InP-based absorption structure. The wavelength tuning range of 10.5 nm was achieved via thermal-optic effect. The external quantum efficiency of about 22%, the spectral linewidth as narrow as 0.6 nm, and the 3-dB bandwidth of 12 GHz were obtained in the device.

References

7

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Engineering, Materials Engineering, Materials Science +16

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Engineering, Electrical Engineering, Materials Science +15

Long Wavelength Resonant Cavity Photodetector Based on InP/Air-Gap Bragg Reflectors

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Engineering, Electrical Engineering, Materials Science +16

Low-temperature InP∕GaAs wafer bonding using sulfide-treated surface

Hui Huang, Xiaomin Ren, Xinyan Wang et al. · Applied Physics Letters · 2006 · 18 citations

Engineering, Materials Engineering, Materials Science +17

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Engineering, Electrical Engineering, Materials Science +13