2009 · 56 citations · 6 references
EngineeringElectrical EngineeringLow-power DesignMicroelectronicsSemiconductor DevicesCmos Circuit DesignComplementary Metal-oxide-semiconductor TechnologyDevice CharacterizationMetal-oxide-semiconductor Field-effect TransistorsPower DissipationDepletion-mode TransistorsLow-power Cmos DesignLow-power Voltage Reference DesignLow-voltage Cmos DesignPower ConsumptionUltra-low-power CmosUltra-low-voltage Circuit DesignVoltage Reference Circuits
A voltage reference using a depletion-mode device is designed in a 0.13 mum CMOS process and achieves ultra-low power consumption and sub-1V operation without sacrificing temperature and supply voltage insensitivity. Measurements show a temperature coefficient of 19.4 ppm/degC (3.4 muV/degC), line sensitivity of 0.033%/V, power supply rejection ratio of -67 dB, and power consumption of 2.2 pW. It requires only two devices and functions down to V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">dd</sub> = 0.5 V with an area of 1350 mum <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> . A variant for higher V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">out</sub> is also demonstrated.
6
The Phoenix Processor: A 30pW platform for sensor applications
Mingoo Seok, Scott Hanson, Yu-Shiang Lin et al. · 2008 · 166 citations
A 1V 16.9ppm/°C 250nA Switched-Capacitor CMOS Voltage Reference
Hong-Wei Huang, Chun‐Yu Hsieh, Ke‐Horng Chen et al. · 2008 · 38 citations