Dislocations and Stacking Faults in Ti ₃ SiC ₂

Abstract

The ternary carbide Ti 3 SIC 2 fabricated by a reactive hot‐press route is investigated by transmission electron microscopy. The material consists mainly of large elongated grains with planar boundaries, and is characterized by a low defect density. Dislocations are observed in the grains and at grain boundaries. Perfect dislocations with b = 1/3<1120> lying in (0001) basal planes are present. These basal plane dislocations are mobile and multiply as a result of room‐temperature deformation. All of the stacking faults observed lie in the basal planes.