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Packaging considerations for very high temperature microsystems
37
Citations
4
References
2003
Year
Unknown Venue
Sic IcEngineeringIntegrated CircuitsRefrigerationHigh-temperature Package DesignAdvanced Packaging (Semiconductors)ThermodynamicsElectronic PackagingMaterials ScienceMaterials EngineeringElectrical EngineeringChip AttachmentHeat TransferMicroelectronicsPackaging TechnologyChip-scale PackagePower DeviceMicrofabricationHigh Temperature MicrosystemsThermal EngineeringCarbide
The keys to successful high-temperature microsystems are the availability of stable high-temperature electronic components (integrated circuits, resistors, capacitors, etc.) and the packaging of these components using the proper materials. The development of silicon carbide integrated circuit (SiC IC) devices for use at temperatures up to 600/spl deg/C is well underway for these applications. Even though ceramic packages are available for room-temperature electronics, none of them is suitable to package SiC ICs for use over 300/spl deg/C. Therefore, without parallel developments in packaging technology, the advances in SiC ICs will not matter much. Package selection and development are critical factors in meeting several key requirements: thermal and electrical performance, cost, and form factor. This paper discusses the high-temperature package design and associated materials issues for SiC based microsystems for use up to 600/spl deg/C.
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