Mechanisms of metallo-organic vapor phase epitaxy and routes to an ultraviolet-assisted process

Abstract

Ultraviolet irradiation during deposition has been reported to improve the morphology and increase the growth rate of GaAs epitaxial layers produced by metallo-organic vapor phase epitaxy. In order to optimize and control these effects for technological applications it is necessary to understand the mechanisms of metallo-organic vapor phase epitaxy (MOVPE). This paper reviews the current state of knowledge relevant to the UV intervention in InP growth. Preliminary experiments on the effect of UV in this system suggest that it may be increasing the mobility of the adsorbed reactant species.