Time-resolved optical characterization of InAs/InGaAs quantum dots emitting at 1.3 μm

Abstract

We present the time-resolved optical characterization of InAs/InGaAs self-assembled quantum dots emitting at 1.3 μm at room temperature. The photoluminescence decay time varies from 1.2 (5 K) to 1.8 ns (293 K). Evidence of thermalization among dots is seen in both continuous-wave and time-resolved spectra around 150 K. A short rise time of 10±2 ps is measured, indicating a fast capture and relaxation of carriers inside the dots.