IEEE Transactions on Circuits and Systems I Regular Papers · 2011 · 222 citations · 26 references
EngineeringComputer EngineeringElectrical EngineeringAnalog ElectronicsPower ElectronicsSemiconductor DevicesAc-dc ConversionCmos Circuit DesignHigh-frequency Power ConversionLow-power Digital Circuit DesignPower ManagementCmos Analog Integrated CircuitsComparator DesignComparatorsDropoutDropout VoltageFull-wave RectifiersOvervoltage ProtectionPower Conversion Efficiency
We present an active full-wave rectifier with offset-controlled high speed comparators in standard CMOS that provides high power conversion efficiency (PCE) in high frequency (HF) range for inductively powered devices. This rectifier provides much lower dropout voltage and far better PCE compared to the passive on-chip or off-chip rectifiers. The built-in offset-control functions in the comparators compensate for both turn-on and turn-off delays in the main rectifying switches, thus maximizing the forward current delivered to the load and minimizing the back current to improve the PCE. We have fabricated this active rectifier in a 0.5-μm 3M2P standard CMOS process, occupying 0.18 mm(2) of chip area. With 3.8 V peak ac input at 13.56 MHz, the rectifier provides 3.12 V dc output to a 500 Ω load, resulting in the PCE of 80.2%, which is the highest measured at this frequency. In addition, overvoltage protection (OVP) as safety measure and built-in back telemetry capabilities have been incorporated in our design using detuning and load shift keying (LSK) techniques, respectively, and tested.
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Piezoelectric Micro-Power Generation Interface Circuits
Taoran Le, Jae‐Kyung Han, Annette von Jouanne et al. · IEEE Journal of Solid-State Circuits · 2006 · 253 citations