A 90nm CMOS Low Noise Amplifier Using Noise Neutralizing for 3.1-10.6GHz UWB System

Abstract

This paper presents a wide-band low noise amplifier (LNA) using noise neutralizing technique for 3-10 GHz ultra-wideband (UWB) system. The thermal noise neutralizing method allows for the design of a low noise figure (NF) LNA and broadband input impedance matching without instability problems. Using the bandwidth enhancement networks, the flat passband gain can be achieved for 3-10GHz UWB system. The proposed LNA with on-chip matching network was fabricated in 90nm general propose digital CMOS process. The measured NF is below 6dB over 10GHz. Furthermore, the total power gain is 12dB, the input matching is better than -10dB, the -3dB bandwidth is from 2GHz to 12GHz, and the IIP3 is -4dBm. The LNA drains 14mA from a 1.2V supply and the die area is 0.8 times 0.87mm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup>