Finite-element methods in semiconductor device simulation

Abstract

Application of the finite-element method for continuous time-dependent media to two-dimensional semiconductor device simulation is described. It is shown that this method guarantees exact conservation of current both locally and at the device terminals. Finite-element forms of Poisson's equation and the electron and hole current continuity equations are derived. Implementation of second order (linear triangular elements) and fourth order (Hermite bicubic elements) methods is discussed.