IEEE Microwave and Guided Wave Letters · 1998 · 240 citations · 7 references
EngineeringElectrical EngineeringMicroelectronicsMicrowave EngineeringSemiconductor DevicesHigh-frequency Semiconductor DevicesMicrowave AmplifiersMicrowave Integrated CircuitsMicrowave Semiconductor DevicesPower AmplifiersWide Band Gap SemiconductorsClass Ab AmplifiersClass Ab Power AmplifiersHarmonic TuningPower Added EfficiencyPower Amplifier DesignPower EfficiencyRadio Frequency Power AmplifiersTuning
Two class AB GaAs field-effect transistor (FET) power amplifiers have been designed and fabricated in the 4.4-4.8 GHz range. In the first case, a dielectric PBG line was incorporated in the design to tune the second harmonic. In the second case, a 50-/spl Omega/ line is used with no harmonic tuning. The PBG structure allows broad-band harmonic tuning and is inexpensive to fabricate. A 5% improvement in power-added efficiency was achieved at the design frequency of 4.5 GHz, in both simulation and measurement.
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High-efficiency power amplifier integrated with antenna
V. Radisic, Siou Teck Chew, Yongxi Qian et al. · IEEE Microwave and Guided Wave Letters · 1997 · 83 citations