Publication | Open Access
Evolution of microstructure and related optical properties of ZnO grown by atomic layer deposition
101
Citations
49
References
2013
Year
Optical MaterialsPoint DefectsEngineeringHigh Oxygen RatioChemical DepositionLuminescence PropertyRelated Optical PropertiesIi-vi SemiconductorOptical PropertiesPulsed Laser DepositionEpitaxial GrowthAtomic Layer DepositionThin Film ProcessingMaterials SciencePhotoluminescenceNanotechnologyOxide ElectronicsApplied PhysicsThin FilmsOptoelectronics
A study of transmittance and photoluminescence spectra on the growth of oxygen-rich ultra-thin ZnO films prepared by atomic layer deposition is reported. The structural transition from an amorphous to a polycrystalline state is observed upon increasing the thickness. The unusual behavior of the energy gap with thickness reflected by optical properties is attributed to the improvement of the crystalline structure resulting from a decreasing concentration of point defects at the growth of grains. The spectra of UV and visible photoluminescence emissions correspond to transitions near the band-edge and defect-related transitions. Additional emissions were observed from band-tail states near the edge. A high oxygen ratio and variable optical properties could be attractive for an application of atomic layer deposition (ALD) deposited ultrathin ZnO films in optical sensors and biosensors.
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