Dynamic SRAM stability characterization in 45nm CMOS

Abstract

A method for characterizing dynamic SRAM stability using pulsed wordlines, is demonstrated in 45nm CMOS. Static read margins were observed to overestimate failures by up to 1000x while static write margins failed to predict outliers in dynamic write stability. Dynamic write stability was demonstrated to exhibit an enhanced sensitivity to process variations, and negative bias temperature instability (NBTI), compared to static write margins.