Characterization of β‐Silicon Carbide Powders Synthesized by the Carbothermal Reduction of Silicon Carbide Precursors

Abstract

Boron‐doped and nondoped ultrafine β‐silicon carbide (β‐SiC) powders were synthesized via the carbothermal reduction of SiC precursors at temperatures of 1773–1973 K. Although the reaction rate of carbothermal reduction was generally higher when a boron‐doped precursor was used, the reaction rate for the boron‐doped precursor was reduced considerably at 1873 K. For boron‐doped and nondoped precursors, the reaction rates were almost the same. Powder characterization via transmission electron microscopy indicated that the suppression of the reaction rate for boron‐doped precursor at 1873 K was due to the formation of a special coexistent system with two types of particle agglomerates. As expected, boron doping inhibited the particle growth in the synthesis of SiC powder.