A 22–31 GHz Distributed Amplifier Based on High-Pass Transmission Lines Using 0.18 <formula formulatype="inline"><tex Notation="TeX">$\mu{\rm m}$</tex></formula> CMOS Technology

Abstract

This letter demonstrates a 22-31 GHz CMOS distributed amplifier (DA) based on high-pass transmission lines. Unlike the low-pass DA, the circuit can be smaller since it does not need extra drain bias circuits. This DA has a maximum output power of 12 dBm, a maximum <i xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">OP</i> <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">1dB</sub> of 6.5 dBm, and a small signal gain of 6.4 dB. The chip occupies a miniature area of 0.28 mm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> including the pads and the core area is only 0.17 mm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> .