An easy-to-use FET DRO design procedure suited to most CAD programs

Abstract

A design procedure for a reflection-stabilized dielectric resonator oscillator (DRO) is given that takes advantage of the facilities available from most linear microwave CAD (computer-aided design) programs, hence streamlining and simplifying the task. The method was used to design 27.61-GHz MESFET hybrid DROs with an average output power of +3 dBm, +or-2-MHz stability from -20 to +40 degrees C, and -75 dBc/Hz phase noise at 10 kHz from carrier. The circuit has been designed to be transferable to GaAs with few modifications.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">&gt;</ETX>