IGCTs: High-Power Technology for power electronics applications

Abstract

This paper focuses on the most recent technical developments in integrated gate commutated thyristors. Improved safe operating area (SOA) of a new IGCT chip set based on ABB's high power technology (HPT) platform with a rated voltage of 10 kV is presented. A matching 10 kV freewheeling diode is also reported. Combined, these developments open the door to new applications of silicon IGCTs reaching voltage levels of 7.2 kV RMS or more.