Investigation of thermal resistance for the graphene-Si interface by molecular dynamics

Abstract

The thermal resistance of the graphene-Si interface is systematically investigated based on the micro-canonical ensemble (NVE) by using three kinds of interaction potentials. When the system reaches the steady state, the heat flux is applied to the model. The results show that the thermal resistance of the graphene-Si interface is weakened because of the defect in graphene. Defect in graphene leads to a sharp decline of the interfacial thermal resistance. However, the interfacial thermal resistance declines gradually with the defect area increase. When the defect area is increased to 19.7% of the total area, the interfacial thermal resistance tends to be stable.