A comprehensive model for photomixing in ultrafast photoconductors

Abstract

A comprehensive model for photomixing phenomenon in a dc-biased ultrafast photoconductor is proposed. The dependence of the carrier lifetime and carrier velocity on the electric field is taken into account, and the significance of carrier transport and carrier generation and recombination mechanisms in a terahertz photomixer are evaluated. A method for calculating the nonuniform induced electric field due to excess charge density resulting from unequal electron and hole recombination lifetimes is presented